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Lower pulse width distortion — more accurate PWM reproduction at the gate
ATmega16 / ATmega32 microcontrollers
TEC1 Peltier Modules provide unmatched temperature differentials (DTmax) in cooling or heating applications
Dual Ball Bearing Support: To enhance durability and reduce friction
HY1920P MOSFET 32f407 Lower pulse width distortion —HY1920P MOSFET Specifications: Type Designator: HY1920P Type of Transistor: MOSFET Type of Control Channel: N Channel Maximum Power Dissipation (Pd): 375 W Maximum Drain Source Voltage Vds : 200 V Maximum Gate Source Voltage Vgs : 20 V Maximum Gate Threshold Voltage Vgs(th) : 4 V Maximum Drain Current Id : 90 A Maximum Junction Temperature (Tj): 175 C Total Gate Charge (Qg): 130. 4 nC Rise Time (tr): 45 nS Drain Source Capacitance (Cd): 392 pF Maximum
US$ 135.00
US$ 39.95
US$ 49.95
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